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NJW1302 NJW3281 250V 15A Complementary Power Bipolar Transistors TO-3P

NJW1302 and NJW3281 complementary 250V 15A silicon power bipolar transistors with 200W power dissipation and TO-3P packaging for high-power audio and linear amplifier applications.
TECHNICAL SPECIFICATION
Category
Transistors
Packaging
Standard Package
MOQ
Negotiable
APPLICATIONS
High Power Audio Amplifiers, Home Audio Receivers, Professional Audio Amplifiers, Theater Sound Systems, Public Address Systems, Linear Amplifiers, Power Amplifier Stages, Audio Equipment, High Power Linear Circuits

Product Details

NJW1302 and NJW3281 are complementary silicon power bipolar transistors designed for high-power audio amplification and other linear applications. The pair consists of the NJW1302 PNP transistor and NJW3281 NPN transistor, providing complementary characteristics for push-pull amplifier output stages and other circuits that require matched NPN and PNP power devices.

Both transistors are rated for a collector-emitter voltage of 250V and a continuous collector current of 15A. Their total power dissipation is specified at up to 200W when the case temperature is maintained at 25°C, making the devices suitable for demanding power amplifier designs where substantial electrical and thermal power handling is required.

The complementary NPN and PNP configuration allows NJW1302 and NJW3281 to be used together in symmetrical amplifier circuits. Their gain matching is specified within 10% over the 50mA to 5A collector-current range, helping designers achieve balanced operation in complementary output stages.

The devices provide a minimum DC current gain of 75 under specified test conditions and a transition frequency of at least 30MHz. These characteristics support applications requiring linear signal amplification and relatively high operating bandwidth.

NJW1302 and NJW3281 also feature an exceptional safe operating area and high breakdown voltage. These characteristics are important in high-power linear circuits where the output transistors may experience significant voltage and current simultaneously.

The maximum continuous collector current is 15A, while the peak collector current can reach 30A under the specified pulse-test conditions. The emitter-base voltage rating is 5V, and the devices have an operating and storage junction temperature range extending from -65°C to +150°C.

Both transistors use a TO-3P through-hole package. The package is designed for power semiconductor applications and allows the transistor to be connected to an appropriate heatsink or thermal management structure. Because power dissipation depends strongly on case temperature and thermal resistance, the actual operating power should be evaluated together with the heatsink, mounting method and ambient conditions.

NJW1302 is the PNP member of the complementary pair, while NJW3281 is the NPN member. Using the two devices together can provide symmetrical current sourcing and sinking characteristics in a class AB or other complementary power amplifier topology.

Typical applications include high-end consumer audio products, home amplifiers, home receivers, professional audio amplifiers, theater and stadium sound systems, and public address equipment. They can also be considered for other linear power circuits where a complementary high-voltage, high-current bipolar transistor pair is required.

When designing an amplifier around NJW1302 and NJW3281, engineers should consider bias stability, safe operating area, thermal dissipation, collector current, voltage swing and transistor matching. Proper heatsinking is particularly important when the output stage operates at high power, since the 200W power dissipation rating is specified under controlled case-temperature conditions rather than as a universal continuous output-power rating.

The complementary NJW1302 and NJW3281 combination provides a practical power BJT solution for high-power linear amplification. With 250V voltage capability, 15A continuous collector current, 200W maximum power dissipation and TO-3P packaging, the pair is suited to power amplifier output stages and other high-power linear electronic circuits.


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