Product Details CRXQF45M065G2Z is a 650V silicon carbide MOSFET designed for high-efficiency and high-frequency power conversion. It combines a 650V drain-source voltage rating with a typical on-resistance of 45mΩ and a continuous drain current rating of up to 49A under specified thermal conditions.The device uses CRM G2 SiC MOSFET technology and is designed to provide low conduction losses, fast switching performance and high-voltage blocking capability. Its silicon carbide construction makes it suitable for power conversion systems where switching efficiency, power density and thermal performance are important design considerations.CRXQF45M065G2Z supports a maximum drain-source voltage of 650V. The continuous drain current is rated at 49A with the case maintained at 25°C, while the specified current decreases under higher case temperatures. A pulsed drain current rating of 123A is provided for short-duration switching conditions within the device's thermal and junction-temperature limits.The MOSFET has a typical RDS(on) of 45mΩ, helping reduce conduction losses when the device is operated within its specified gate-drive conditions. The device also provides high-speed switching characteristics with low capacitance, making it suitable for applications requiring efficient switching at elevated frequencies.A TO-247-4L through-hole package provides a four-terminal configuration suitable for power electronics designs. The package supports effective thermal management and can be integrated with appropriate heatsinks and PCB or busbar structures according to the system design.The device has a dynamic gate-source voltage range of -10V to +22V under the specified conditions, while the static operating range is specified separately. Designers should follow the manufacturer's recommended gate-drive conditions and account for switching transients when developing the gate-drive circuit.CRXQF45M065G2Z also features avalanche ruggedness and is 100% avalanche tested according to the manufacturer's product information. These characteristics support applications where the power switch may experience transient electrical stress during switching events.Typical applications include switching-mode power supplies, high-voltage DC/DC converters, on-board chargers and EV charging equipment. The device can also be considered for industrial power conversion, energy storage systems and other high-power switching applications where the characteristics of silicon carbide MOSFET technology provide advantages over conventional silicon MOSFET solutions.When designing with CRXQF45M065G2Z, engineers should evaluate switching frequency, gate resistance, thermal conditions, PCB layout, parasitic inductance, voltage overshoot and cooling requirements. The 49A current rating is specified under particular thermal conditions and should not be treated as a universal operating current without considering the complete system design.CRXQF45M065G2Z is supplied in a TO-247-4L package and provides a high-voltage SiC MOSFET option for power conversion designs requiring low conduction resistance, fast switching and high power density.